this specification documents the detailed requirements for analog devices space qualified die including die qualification as described for class k in mil - prf - 38534, appendix c, table c - ii except as modified herein. the manufacturing flow des cribed in the standard die products program brochure at http://www.analog.com/aerospace is to be considered a part of this specification. this data sheet specifically details the space grade version of this product. a more detailed operational descripti on and a complete data sheet for commercial product grades can be found at www.analog.com/dac08 the complete part number(s) of this specification follow: part number description d ac08 - 000c 8 - bit high - speed multiplying d/a converter dac08r000c radiation guaranteed 8 - bit high - speed multiplying d/a converter out i
supply voltage (v+ to v - ) ................................ ......................... 36v dc logic inputs ................................ ................................ ............... v - to (v - plus 36v dc) logic control voltage (v lc ) ................................ ........................ v - to v+ analog current outputs (at v - = 15v) ................................ ....... 4.25ma r eference input (v ref+ to v ref - ) ................................ ................ v - to v+ reference input differential voltage (v ref+ to v ref - ) ................ 18v dc reference input current (i vref+ ) ................................ ................ 5ma storage temperature range ................................ .................... - 65 ? c to +125 ? c ambient operating temperature range (t a ) ............................ - 55 ? c to +125 ? c junction temperature (t j ).................................................. ........ +150c absolute maximum ratings notes: 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degra de performance and affect reliability. in accordance with class - k version of mil - prf - 38534, appendix c, table c - ii, except as modified herein. (a) qual sample size and qual acceptance criteria C 25/2 (b) qual sample pac kage C dip (c) pre - screen electrical test over temperature performed post - assembly prior to die qualification .
? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? table i notes: 1 . v s = 15v, i ref = 2ma, and t a = +25 ? c, unless otherwi se specified. - v % i % o ? ? ? ? ? v % i % o
table ii notes: 1 . v s = 15v, i ref = 2ma, unless otherwise specified. 2 . when the device is used in an un - biased state at high temperature only, and subsequently biased, the device supply currents may rise 30% above specification for as long as 30 seconds. 3 . devices tested at 100k. 4 . this par ameter not tested post irradiation. ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? v % i % o - v % i % o ? ?
? ? 5.1 htrb is not applicable for this drawing. 5.2 burn - in is pe r mil - std - 883 method 1015 test condition b or c. 5.3 steady state life test is per mil - std - 883 method 1005.
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